- 您现在的位置：买卖IC网 > Sheet目录455 > IXFN40N110P (IXYS)MOSFET N-CH 1100V 34A SOT-227B
Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFN40N110P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
1100V
34A
260 m Ω
300 ns
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
miniBLOC, SOT-227 B (IXFN)
E153432
V DSS
V DGR
V GSS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
Transient
1100
1100
± 30
± 40
V
V
V
V
G
S
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
34
100
20
A
A
A
G = Gate
S = Source
D
D = Drain
S
E AS
dV/dt
P D
T J
T JM
T stg
T L
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
2
20
890
-55 ... +150
150
-55 ... +150
300
J
V/ns
W
° C
° C
° C
° C
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
? International standard package
? Encapsulating epoxy meets
UL 94 V-0, flammability classification
? miniBLOC with Aluminium nitride
isolation
V ISOL
M d
Weight
50/60 Hz, RMS
I ISOL ≤ 1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
2500
3000
1.5/13
1.3/11.5
30
V~
V~
Nm/lb.in.
Nm/lb.in.
g
? Fast recovery diode
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
- easy to drive and to protect
Advantages
? Easy to mount
? Space savings
? High power density
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Applications:
BV DSS
V GS = 0V, I D = 3mA
1100
V
High Voltage Switched-mode and
V GS(th)
I GSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
3.5
6.5
± 300
V
nA
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
I DSS
R DS(on)
V DS = V DSS
V GS = 0V
V GS = 10V, I D = 20A, Note 1
T J = 125 ° C
50 μ A
3 mA
260 m Ω
Lasers Pulsers, Spark Igniters, RF
Generators
High Voltage DC-DC converters
High Voltage DC-AC inverters
? 2008 IXYS CORPORATION, All rights reserved
DS99901A(03/08)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXFN40N90P
MOSFET N-CH 900V 33A SOT227
IXFN420N10T
MOSFET N-CH 100V 420A SOT-227
IXFN44N100P
MOSFET N-CH 1000V 37A SOT-227B
IXFN44N100Q3
MOSFET N-CH 1000V 38A SOT-227
IXFN44N50Q
MOSFET N-CH 500V 44A SOT-227B
IXFN44N50U3
MOSFET N-CH 500V 44A SOT-227B
IXFN44N60
MOSFET N-CH 600V 44A SOT-227B
IXFN44N80P
MOSFET N-CH 800V 39A SOT-227B
相关代理商/技术参数
IXFN40N60
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET
IXFN40N90P
功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFN420N10T
功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 100V 420A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFN43N60
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:HiPerFET Power MOSFET
IXFN44N100P
功能描述:MOSFET 44 Amps 1000V 0.22 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFN44N100Q3
功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/38A
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFN44N50
功能描述:MOSFET 500V 44A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFN44N50Q
功能描述:MOSFET 44 Amps 500V 0.12 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
